3.4 +0.3 -0.1 0.4 ? 0.1 |? 1 .5 ? 0.1 cathode indification features absolute ratings power dissipation on printed t a =50 o c pc mw repetitive peak on-state tp=20 s current f=120hz i trm a operating junction temperature t j o c storage temperature t stg o c min 28 35 typ 32 40 ma x 3 6 4 5 output voltage (note 1) v o mi n v breakover current (note 1) i bo ma x a rise time (note 1) t r typ s leakage current (note 1) i r ma x a 2. connected in parallel w ith the devices note: 1. electrical characteristics applicable i n b oth fo rw ard and re verse dirctions. 5.0 5.0 100.0 1.5 v r =0.5 v bo see fig.1 10.0 c=22nf (note 2) breakover voltage (note 1) breakover voltage symmetry dynamic breakover voltage (note 1) v bo units 150.0 i+v bo i- i-v bo i i vi c=22nf (note 2) see fig.1 i=(i bo to i f =10ma) see fig.1 v v 3.0 v parameters symbols units db3m,DB4M db3m.DB4M voltage range: 28-45 v silicon bidirectional diacs mini-melf the three layer,two termnal,hermetically sealed diacs are designed specifically for triggering thyristors. they demonstrate low break over current at break over voltage as they withstand peak pulse current, the breakover symmetry is within three volts(db6). these diacs are intended for use in thyrisitors phase control,circuits for lamp dimming,universal motor speed control,and heat control. parameters see fig.3 2.0 -40--- +125 c=22nf (note 2) see fig.1 electrical characteristics test conditions -40--- +125 db3 m DB4M see fig.2 ma x mi n dimensions in millimeters
1.04 25 1.00 50 1.02 1.06 1.08 100 75 125 vbo(t j ) vbo(t j =25 ) t j ( ) 10k|? 500k|? d.u.t 220v 60hz 0.1m f v o r=20|? 90% 10% i p tr f=100hz t j initial=25?? i trm (a) 10 100 10000 1000 0.01 0.1 1 2 tp(m s) fig.6--peak pulsee current verent versus pulse duration(maximum values) ratings and characteristic curves db3m.DB4M fig.1--voltage-current characteristic curve fig.2--test circuit for output voltage fig.3-- test circuit see fig.2 adjust r for ip=0.5a fig.4--power dissipation versus ambient temperature (maximum values) fig.5--relative variation of vbo versus junction temperature(typical values) +i f -i f -v +v 10ma i bo i b 0.5v bo v v bo 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 20 40 60 80 100 120 140 160 p(mw) tamb( ?? )
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